购买 Toshiba Semiconductor and Storage TPH2R306NH,L1Q MOSFET N CH 60V 60A SOP ADV - YYIC

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TPH2R306NH,L1Q

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TPH2R306NH,L1Q

MOSFET N CH 60V 60A SOP ADV

型号

TPH2R306NH,L1Q

制造商/品牌

Toshiba Semiconductor and Storage

系列

U-MOSVIII-H

零件状态

Active

包装

Tape & Reel (TR)

技术

MOSFET (Metal Oxide)

工作温度

150°C (TJ)

安装类型

Surface Mount

封装/箱体

8-PowerVDFN

供应商器件封装

8-SOP Advance (5x5)

功率耗散（最大）

1.6W (Ta), 78W (Tc)

场效应晶体管类型

N-Channel

场效应晶体管特性

-

漏源电压 (Vdss)

60V

电流 - 连续漏极 (Id) @ 25�C

60A (Tc)

Rds On（最大值）@ Id、Vgs

2.3 mOhm @ 30A, 10V

Vgs(th)（最大值）@Id

4V @ 1mA

栅极电荷 (Qg) (最大值) @ Vgs

72nC @ 10V

输入电容 (Ciss) (最大值) @ Vds

6100pF @ 30V

驱动电压（最大导通电阻、最小导通电阻）

6.5V, 10V

电压 (最大值)

±20V

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