购买 Toshiba Semiconductor and Storage TK13A60D(STA4,Q,M) MOSFET N-CH 600V 13A TO220SIS - YYIC

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TK13A60D(STA4,Q,M)

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TK13A60D(STA4,Q,M)

MOSFET N-CH 600V 13A TO220SIS

型号

TK13A60D(STA4,Q,M)

制造商/品牌

Toshiba Semiconductor and Storage

系列

π-MOSVII

零件状态

Active

包装

Tube

技术

MOSFET (Metal Oxide)

工作温度

150°C (TJ)

安装类型

Through Hole

封装/箱体

TO-220-3 Full Pack

供应商器件封装

TO-220SIS

功率耗散（最大）

50W (Tc)

场效应晶体管类型

N-Channel

场效应晶体管特性

-

漏源电压 (Vdss)

600V

电流 - 连续漏极 (Id) @ 25�C

13A (Ta)

Rds On（最大值）@ Id、Vgs

430 mOhm @ 6.5A, 10V

Vgs(th)（最大值）@Id

4V @ 1mA

栅极电荷 (Qg) (最大值) @ Vgs

40nC @ 10V

输入电容 (Ciss) (最大值) @ Vds

2300pF @ 25V

驱动电压（最大导通电阻、最小导通电阻）

10V

电压 (最大值)

±30V

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