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TPC8022-H(TE12LQ,M
更多信息 数据表

TPC8022-H(TE12LQ,M

MOSFET N-CH 40V 7.5A SOP8 2-6J1B
型号
TPC8022-H(TE12LQ,M
制造商/品牌
Toshiba Semiconductor and Storage
系列
-
零件状态
Obsolete
包装
Tape & Reel (TR)
技术
MOSFET (Metal Oxide)
工作温度
150°C (TJ)
安装类型
Surface Mount
封装/箱体
8-SOIC (0.173", 4.40mm Width)
供应商器件封装
8-SOP (5.5x6.0)
功率耗散（最大）
1W (Ta)
场效应晶体管类型
N-Channel
场效应晶体管特性
-
漏源电压 (Vdss)
40V
电流 - 连续漏极 (Id) @ 25�C
7.5A (Ta)
Rds On（最大值）@ Id、Vgs
27 mOhm @ 3.8A, 10V
Vgs(th)（最大值）@Id
2.3V @ 1mA
栅极电荷 (Qg) (最大值) @ Vgs
11nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
650pF @ 10V
驱动电压（最大导通电阻、最小导通电阻）
4.5V, 10V
电压 (最大值)
±20V
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有货 53764 PCS
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