Toshiba Semiconductor and Storage
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TK31V60X,LQ
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TK31V60X,LQ

MOSFET N-CH 600V 30.8A 5DFN
型号
TK31V60X,LQ
制造商/品牌
Toshiba Semiconductor and Storage
系列
DTMOSIV-H
零件状态
Active
包装
Tape & Reel (TR)
技术
MOSFET (Metal Oxide)
工作温度
150°C (TJ)
安装类型
Surface Mount
封装/箱体
4-VSFN Exposed Pad
供应商器件封装
4-DFN-EP (8x8)
功率耗散（最大）
240W (Tc)
场效应晶体管类型
N-Channel
场效应晶体管特性
Super Junction
漏源电压 (Vdss)
600V
电流 - 连续漏极 (Id) @ 25�C
30.8A (Ta)
Rds On（最大值）@ Id、Vgs
98 mOhm @ 9.4A, 10V
Vgs(th)（最大值）@Id
3.5V @ 1.5mA
栅极电荷 (Qg) (最大值) @ Vgs
65nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
3000pF @ 300V
驱动电压（最大导通电阻、最小导通电阻）
10V
电压 (最大值)
±30V
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有货 16054 PCS
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关键词 TK31V60X,LQ
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TK31V60X,LQ 数据表
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