购买 Toshiba Semiconductor and Storage TK10A80W,S4X MOSFET N-CH 800V 9.5A TO220SIS - YYIC

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TK10A80W,S4X

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TK10A80W,S4X

MOSFET N-CH 800V 9.5A TO220SIS

型号

TK10A80W,S4X

制造商/品牌

Toshiba Semiconductor and Storage

系列

DTMOSIV

零件状态

Active

包装

Tube

技术

MOSFET (Metal Oxide)

工作温度

150°C

安装类型

Through Hole

封装/箱体

TO-220-3 Full Pack

供应商器件封装

TO-220SIS

功率耗散（最大）

40W (Tc)

场效应晶体管类型

N-Channel

场效应晶体管特性

-

漏源电压 (Vdss)

800V

电流 - 连续漏极 (Id) @ 25�C

9.5A (Ta)

Rds On（最大值）@ Id、Vgs

550 mOhm @ 4.8A, 10V

Vgs(th)（最大值）@Id

4V @ 450µA

栅极电荷 (Qg) (最大值) @ Vgs

19nC @ 10V

输入电容 (Ciss) (最大值) @ Vds

1150pF @ 300V

驱动电压（最大导通电阻、最小导通电阻）

10V

电压 (最大值)

±20V

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