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NTMD4N03R2G
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NTMD4N03R2G

MOSFET 2N-CH 30V 4A 8SOIC
型号
NTMD4N03R2G
制造商/品牌
ON Semiconductor
系列
-
零件状态
Active
包装
Tape & Reel (TR)
工作温度
-55°C ~ 150°C (TJ)
安装类型
Surface Mount
封装/箱体
8-SOIC (0.154", 3.90mm Width)
功率 - 最大
2W
供应商器件封装
8-SOIC
场效应晶体管类型
2 N-Channel (Dual)
场效应晶体管特性
Logic Level Gate
漏源电压 (Vdss)
30V
电流 - 连续漏极 (Id) @ 25�C
4A
Rds On（最大值）@ Id、Vgs
60 mOhm @ 4A, 10V
Vgs(th)（最大值）@Id
3V @ 250µA
栅极电荷 (Qg) (最大值) @ Vgs
16nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
400pF @ 20V
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NTMD4N03R2G 电子元件
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