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IPI60R600CPAKSA1
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IPI60R600CPAKSA1

MOSFET N-CH 600V 6.1A TO-262
型号
IPI60R600CPAKSA1
制造商/品牌
Infineon Technologies
系列
CoolMOS™
零件状态
Obsolete
包装
Tube
技术
MOSFET (Metal Oxide)
工作温度
-55°C ~ 150°C (TJ)
安装类型
Through Hole
封装/箱体
TO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件封装
PG-TO262-3
功率耗散（最大）
60W (Tc)
场效应晶体管类型
N-Channel
场效应晶体管特性
-
漏源电压 (Vdss)
600V
电流 - 连续漏极 (Id) @ 25�C
6.1A (Tc)
Rds On（最大值）@ Id、Vgs
600 mOhm @ 3.3A, 10V
Vgs(th)（最大值）@Id
3.5V @ 220µA
栅极电荷 (Qg) (最大值) @ Vgs
27nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
550pF @ 100V
驱动电压（最大导通电阻、最小导通电阻）
10V
电压 (最大值)
±20V
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有货 44554 PCS
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