Diodes Incorporated
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产品详情请参阅规格.
ZXMN3F31DN8TA
数据表

ZXMN3F31DN8TA

MOSFET 2N-CH 30V 5.7A 8SOIC
型号
ZXMN3F31DN8TA
制造商/品牌
Diodes Incorporated
系列
-
零件状态
Active
包装
Cut Tape (CT)
工作温度
-55°C ~ 150°C (TJ)
安装类型
Surface Mount
封装/箱体
8-SOIC (0.154", 3.90mm Width)
功率 - 最大
1.8W
供应商器件封装
8-SO
场效应晶体管类型
2 N-Channel (Dual)
场效应晶体管特性
Logic Level Gate
漏源电压 (Vdss)
30V
电流 - 连续漏极 (Id) @ 25�C
5.7A
Rds On（最大值）@ Id、Vgs
24 mOhm @ 7A, 10V
Vgs(th)（最大值）@Id
3V @ 250µA
栅极电荷 (Qg) (最大值) @ Vgs
12.9nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
608pF @ 15V
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有货 9255 PCS
联系信息
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