Triode/MOS tube/transistor/module

Transistor/MOS Tube/Transistor> Field Effect Transistor (MOSFET) Type: 2 N-channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 35.0A Power (Pd): 20.0W On-resistance ( RDS(on)@Vgs,Id): 11.0mΩ@10V, 20.0A Threshold voltage (Vgs(th)@Id): 1.45V@250uA N-channel, 30V, 35.0A, 11.0mΩ@10V

30V, N-channel

P-channel, -25V, -0.12A, 10Ω@-4.5V

PNP

N-channel, 100V, 9.4A, 210mΩ@10V

Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 2.9A Power (Pd): 1W On-Resistance (RDS(on)@Vgs,Id): 45Ω@4.5V, 2.9A Threshold voltage (Vgs(th)@Id): 1.2V@250μA

SuperFET MOSFETs are the first generation of high-voltage super-junction (SJ) MOSFET families utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This process is specially designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.

Type N VDS(V) 30V VGS(V) ±20V Vth(V) -1.5V RDS(ON)(mΩ) 10mΩ ID(A) 60A