Triode/MOS tube/transistor/module
NPN, Vceo=32V, Ic=1A, hfe=180~390
简介
Littelfuse (American Littelfuse)
制造商
CBI (Creation Foundation)
制造商
FUXINSEMI (Fuxin Senmei)
制造商
This N-Channel MV MOSFET is produced using ON Semiconductor's advanced Power Trench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.
简介
The FDMC7692S is produced using an advanced PowerTrench process, which is especially suited for minimizing on-resistance. This device is suitable for power and load switching applications commonly found in notebook computers and portable battery packs.
简介
N-channel, 60V, 16.8A, 63mΩ@10V
简介
FUXINSEMI (Fuxin Senmei)
制造商
TECH PUBLIC (Taizhou)
制造商
ST (STMicroelectronics)
制造商