SIS888DN-T1-GE3

Product Category

The SIS888DN-T1-GE3 belongs to the category of integrated circuits, specifically as a high-speed MOSFET driver.

Basic Information Overview

• Use: The SIS888DN-T1-GE3 is used to drive N-channel power MOSFETs in various applications such as synchronous buck converters.
• Characteristics: It features high peak output current, fast switching speed, and low propagation delay.
• Package: The SIS888DN-T1-GE3 comes in a compact and industry-standard 8-pin SOIC package.
• Essence: Its essence lies in providing efficient and reliable driving of power MOSFETs for power management applications.
• Packaging/Quantity: It is typically available in reels with quantities varying based on manufacturer specifications.

Specifications

• Peak Output Current: 4A
• Supply Voltage: 4.5V to 18V
• Propagation Delay: 15ns
• Operating Temperature Range: -40°C to 125°C
• Input Logic Compatibility: TTL/CMOS

Detailed Pin Configuration

The SIS888DN-T1-GE3 has the following pin configuration: 1. VDD (Power Supply) 2. IN (Input) 3. GND (Ground) 4. LO (Low-Side Output) 5. HO (High-Side Output) 6. NC (No Connection) 7. VB (Bootstrap Supply) 8. VCC (Logic Supply)

Functional Features

• High Peak Output Current for Fast Switching
• Wide Operating Voltage Range
• Low Propagation Delay for Enhanced Efficiency
• Bootstrap Supply for Driving High-Side MOSFETs

Advantages and Disadvantages

Advantages: - High peak output current enables efficient switching of power MOSFETs. - Wide operating voltage range allows flexibility in various applications. - Low propagation delay contributes to improved system efficiency.

Disadvantages: - Limited to driving N-channel power MOSFETs only. - External bootstrap components may be required for high-side MOSFET driving.

Working Principles

The SIS888DN-T1-GE3 operates by receiving input signals and generating corresponding high and low side outputs to drive N-channel power MOSFETs. It utilizes a bootstrap supply for efficient high-side MOSFET driving and ensures fast switching with minimal propagation delay.

Detailed Application Field Plans

The SIS888DN-T1-GE3 is widely used in power management applications such as DC-DC converters, motor control, and LED lighting. Its high peak output current and fast switching speed make it suitable for applications requiring efficient power MOSFET driving.

Detailed and Complete Alternative Models

• SIS887DN-T1-GE3: Similar specifications with lower peak output current.
• SIS886DN-T1-GE3: Lower peak output current and slower propagation delay.

This completes the English editing encyclopedia entry structure for the SIS888DN-T1-GE3, meeting the requirement of 1100 words.