The SIHU3N50D-E3 is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and functional features.
The SIHU3N50D-E3 has the following specifications: - Drain-Source Voltage (VDSS): 500V - Continuous Drain Current (ID): 3A - On-Resistance (RDS(ON)): 2.5Ω - Gate Threshold Voltage (VGS(TH)): 2.0V - 4.0V - Total Gate Charge (QG): 10nC
The SIHU3N50D-E3 follows the standard pin configuration for a DPAK package: 1. Source (S) 2. Gate (G) 3. Drain (D)
The SIHU3N50D-E3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to regulate the flow of current through the device. By modulating the gate voltage, the MOSFET can effectively switch between conducting and non-conducting states, enabling precise control over power flow.
The SIHU3N50D-E3 finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - LED lighting - Audio amplifiers - Solar inverters
Some alternative models to the SIHU3N50D-E3 include: - IRF840 - FQP27P06 - STP55NF06L - AOT240L
In conclusion, the SIHU3N50D-E3 power MOSFET offers efficient power management capabilities, making it suitable for a wide range of high voltage applications. Its unique characteristics and functional features position it as a versatile component in electronic designs.
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What type of package does SIHU3N50D-E3 come in?
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