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SI4840BDY-T1-E3
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SI4840BDY-T1-E3

Product Overview

Category

The SI4840BDY-T1-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High power handling capability
  • Low on-resistance
  • Fast switching speed
  • Low gate drive requirements

Package

The SI4840BDY-T1-E3 is typically available in a small outline package (SOP) with a specified footprint for surface mount assembly.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, typically 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 11A
  • On-Resistance (RDS(on)): 9.5mΩ
  • Power Dissipation (PD): 2.5W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4840BDY-T1-E3 has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

  • Low on-resistance for minimal power loss
  • High current handling capability
  • Fast switching speed for efficient power control

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-resistance for reduced power dissipation
  • Suitable for high-frequency switching applications

Disadvantages

  • Sensitive to static electricity and voltage spikes
  • Requires careful handling during assembly and operation

Working Principles

The SI4840BDY-T1-E3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - Motor control circuits - LED lighting systems - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI4840BDY-T1-E3 include: - SI4841BDY-T1-E3 - SI4842BDY-T1-E3 - SI4843BDY-T1-E3

In summary, the SI4840BDY-T1-E3 is a versatile power MOSFET with high power handling capabilities, fast switching speed, and low on-resistance, making it suitable for various power management applications.

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10个与SI4840BDY-T1-E3在技术解决方案中的应用相关的常见问题及解答

  1. What is the SI4840BDY-T1-E3?

    • The SI4840BDY-T1-E3 is a P-channel MOSFET designed for use in various technical solutions, such as power management and battery protection.

  2. What is the maximum drain-source voltage of the SI4840BDY-T1-E3?

    • The maximum drain-source voltage of the SI4840BDY-T1-E3 is 40V.

  3. What is the typical on-resistance of the SI4840BDY-T1-E3?

    • The typical on-resistance of the SI4840BDY-T1-E3 is 45mΩ.

  4. What are the typical applications of the SI4840BDY-T1-E3?

    • The SI4840BDY-T1-E3 is commonly used in applications such as load switching, power management, and battery protection in various electronic devices.

  5. What is the maximum continuous drain current of the SI4840BDY-T1-E3?

    • The maximum continuous drain current of the SI4840BDY-T1-E3 is 17A.

  6. What is the package type of the SI4840BDY-T1-E3?

    • The SI4840BDY-T1-E3 comes in a D-PAK (TO-252) package.

  7. What is the gate-source voltage range for the SI4840BDY-T1-E3?

    • The gate-source voltage range for the SI4840BDY-T1-E3 is ±20V.

  8. Does the SI4840BDY-T1-E3 have built-in ESD protection?

    • Yes, the SI4840BDY-T1-E3 features built-in ESD protection, enhancing its reliability in various applications.

  9. What is the operating temperature range of the SI4840BDY-T1-E3?

    • The SI4840BDY-T1-E3 has an operating temperature range of -55°C to 150°C, making it suitable for a wide range of environments.

  10. Is the SI4840BDY-T1-E3 RoHS compliant?

    • Yes, the SI4840BDY-T1-E3 is RoHS compliant, meeting environmental standards for lead-free manufacturing.