STW18N60M2
Introduction
The STW18N60M2 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Semiconductor device
- Use: Power switching applications
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-247
- Essence: Efficient power management
- Packaging/Quantity: Typically packaged in reels of 100 units
Specifications
- Voltage Rating: 600V
- Current Rating: 18A
- On-Resistance: 0.25Ω
- Gate Charge: 38nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The STW18N60M2 features a standard TO-247 pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- High voltage capability allows for use in various power applications
- Low on-resistance minimizes power losses and improves efficiency
- Fast switching speed enables rapid control of power flow
Advantages
- High voltage rating suitable for demanding applications
- Low on-resistance reduces power dissipation
- Fast switching speed enhances overall system performance
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Larger physical size due to TO-247 package
Working Principles
The STW18N60M2 operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, the MOSFET allows current to flow between the drain and source terminals.
Detailed Application Field Plans
The STW18N60M2 finds extensive use in power supply units, motor control systems, and inverters due to its high voltage capability and efficient switching characteristics. Additionally, it is employed in industrial automation, renewable energy systems, and automotive electronics.
Detailed and Complete Alternative Models
- STW17NB60: Similar specifications with slightly lower voltage and current ratings
- IRFP460: Comparable high-voltage MOSFET with different packaging
- IXFN38N100: Alternative with higher voltage rating and lower on-resistance
In conclusion, the STW18N60M2 power MOSFET offers high-performance characteristics suitable for a wide range of power switching applications, making it a valuable component in modern electronic systems.
Word count: 366
10个与STW18N60M2在技术解决方案中的应用相关的常见问题及解答
What is the maximum drain-source voltage rating of STW18N60M2?
- The maximum drain-source voltage rating of STW18N60M2 is 600V.
What is the continuous drain current rating of STW18N60M2?
- The continuous drain current rating of STW18N60M2 is 18A.
What is the on-resistance of STW18N60M2?
- The on-resistance of STW18N60M2 is typically 0.25 ohms.
Can STW18N60M2 be used in high-frequency switching applications?
- Yes, STW18N60M2 is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
What type of package does STW18N60M2 come in?
- STW18N60M2 is available in a TO-247 package.
Is STW18N60M2 suitable for use in power supplies?
- Yes, STW18N60M2 is commonly used in power supply applications due to its high voltage and current ratings.
Does STW18N60M2 require a heat sink for operation?
- Depending on the application and power dissipation, a heat sink may be required for optimal thermal performance of STW18N60M2.
What are the typical gate charge and gate-source threshold voltage of STW18N60M2?
- The typical gate charge of STW18N60M2 is 40nC, and the gate-source threshold voltage is around 4V.
Can STW18N60M2 be used in motor control applications?
- Yes, STW18N60M2 can be used in motor control applications due to its high current handling capability.
What are the recommended operating temperature and storage temperature ranges for STW18N60M2?
- The recommended operating temperature range for STW18N60M2 is -55°C to 150°C, and the storage temperature range is -55°C to 175°C.