BR24T32F-WE2

Product Overview

Category

BR24T32F-WE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic systems.

Characteristics

• Non-volatile: The BR24T32F-WE2 retains stored data even when power is disconnected.
• High capacity: It offers a storage capacity of 32 kilobits (4 kilobytes).
• Low power consumption: The device operates on low power, making it suitable for battery-powered applications.
• Fast data transfer: It supports high-speed data transfer rates, ensuring efficient data handling.
• Durable: The BR24T32F-WE2 is designed to withstand harsh environmental conditions.

Package

The BR24T32F-WE2 is available in a compact surface-mount package, ensuring easy integration into electronic systems.

Essence

The essence of this product lies in its ability to provide reliable and efficient non-volatile memory storage.

Packaging/Quantity

The BR24T32F-WE2 is typically packaged in reels or tubes, with each containing a specific quantity of devices. Please refer to the manufacturer's specifications for detailed packaging information.

Specifications

• Storage Capacity: 32 kilobits (4 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 5.5V
• Data Retention: Up to 100 years
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1 million cycles

Detailed Pin Configuration

The BR24T32F-WE2 features a standard 8-pin configuration:

1. VCC: Power supply voltage
2. GND: Ground connection
3. SDA: Serial Data Line for I2C communication
4. SCL: Serial Clock Line for I2C communication
5. WP: Write Protect pin for hardware write protection
6. A0: Address bit 0 for device addressing
7. A1: Address bit 1 for device addressing
8. NC: No Connection

Functional Features

• Sequential Read and Write Operations: The BR24T32F-WE2 supports sequential read and write operations, enabling efficient data handling.
• Software Write Protection: It provides software-controlled write protection to prevent accidental modification of stored data.
• Page Write Mode: This feature allows simultaneous programming of multiple bytes, enhancing write efficiency.
• Self-Timed Programming Cycle: The device automatically manages the timing of write cycles, simplifying system integration.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life.
• Fast data transfer rates for efficient data handling.
• Durable design suitable for harsh environments.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Requires an I2C interface for communication.

Working Principles

The BR24T32F-WE2 utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping electrical charges in floating gate transistors, ensuring data retention even when power is disconnected. The I2C interface facilitates communication between the device and the host system, allowing seamless data transfer.

Detailed Application Field Plans

The BR24T32F-WE2 finds applications in various electronic systems, including but not limited to: - Automotive electronics - Industrial control systems - Consumer electronics - Medical devices - Smart meters

Detailed and Complete Alternative Models

1. BR24T32FJ-WE2: Similar to BR24T32F-WE2 with additional security features.
2. BR24T64F-WE2: Offers double the storage capacity of BR24T32F-WE2.
3. BR24T16F-WE2: Provides lower storage capacity for cost-sensitive applications.

These alternative models cater to different requirements and can be considered based on specific project needs.

In conclusion, the BR24T32F-WE2 is a reliable non-volatile memory device with high storage capacity, low power consumption, and fast data transfer rates. Its durability and compatibility make it suitable for various electronic systems across different industries.