PSMN2R0-25YLDX
Product Overview
Category
The PSMN2R0-25YLDX belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications, such as voltage regulation and power switching.
Characteristics
- High power handling capability
- Low on-resistance
- Fast switching speed
- Low gate drive requirements
Package
The PSMN2R0-25YLDX is typically available in a TO-220 package.
Essence
This MOSFET is essential for efficient power control and management in various electronic systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 25V
- Continuous Drain Current (ID): 100A
- RDS(ON) Max: 2.0mΩ
- Power Dissipation (PD): 300W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The PSMN2R0-25YLDX features a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- Low on-resistance for minimal power loss
- High current-carrying capability
- Fast switching speed for improved efficiency
- Robust construction for reliability in demanding applications
Advantages and Disadvantages
Advantages
- High power handling capacity
- Low on-resistance leading to reduced heat dissipation
- Fast switching speed for improved performance
Disadvantages
- Higher gate capacitance compared to some alternative models
- Sensitive to static discharge if mishandled
Working Principles
The PSMN2R0-25YLDX operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching characteristics to regulate and control power flow within electronic circuits.
Detailed Application Field Plans
The PSMN2R0-25YLDX is well-suited for a wide range of applications, including: - Switch-mode power supplies - Motor control systems - Battery management - LED lighting - Automotive electronics
Detailed and Complete Alternative Models
Some alternative models to the PSMN2R0-25YLDX include: - IRF3205 - FDP8878 - STP80NF55-06
In conclusion, the PSMN2R0-25YLDX power MOSFET offers high-performance characteristics suitable for various power management applications, making it an essential component in modern electronic systems.
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10个与PSMN2R0-25YLDX在技术解决方案中的应用相关的常见问题及解答
Sure, here are 10 common questions and answers related to the application of PSMN2R0-25YLDX in technical solutions:
Question: What is the maximum drain current for PSMN2R0-25YLDX?
Answer: The maximum drain current for PSMN2R0-25YLDX is 120A.Question: What is the typical on-state resistance for PSMN2R0-25YLDX?
Answer: The typical on-state resistance for PSMN2R0-25YLDX is 2.0mΩ.Question: What is the maximum power dissipation for PSMN2R0-25YLDX?
Answer: The maximum power dissipation for PSMN2R0-25YLDX is 300W.Question: What is the gate-source voltage for PSMN2R0-25YLDX?
Answer: The gate-source voltage for PSMN2R0-25YLDX is ±20V.Question: What is the operating temperature range for PSMN2R0-25YLDX?
Answer: The operating temperature range for PSMN2R0-25YLDX is -55°C to 175°C.Question: Can PSMN2R0-25YLDX be used in automotive applications?
Answer: Yes, PSMN2R0-25YLDX is suitable for automotive applications.Question: What type of package does PSMN2R0-25YLDX come in?
Answer: PSMN2R0-25YLDX comes in a TO-220 package.Question: Is PSMN2R0-25YLDX RoHS compliant?
Answer: Yes, PSMN2R0-25YLDX is RoHS compliant.Question: What is the gate charge for PSMN2R0-25YLDX?
Answer: The gate charge for PSMN2R0-25YLDX is 60nC.Question: Can PSMN2R0-25YLDX be used in high-frequency switching applications?
Answer: Yes, PSMN2R0-25YLDX is suitable for high-frequency switching applications.