MT42L128M64D2MC-18 WT:A

Overview

Category: Memory Module
Use: Data storage and retrieval
Characteristics: High capacity, fast data transfer rate
Package: DIMM (Dual In-Line Memory Module)
Essence: Dynamic Random Access Memory (DRAM)
Packaging/Quantity: Individually packaged, single unit

Specifications

• Part Number: MT42L128M64D2MC-18 WT:A
• Capacity: 1 GB
• Organization: 128M words × 64 bits
• Speed: 1800 MHz
• Voltage: 1.35V
• Interface: DDR3 SDRAM
• Form Factor: 240-pin DIMM
• Operating Temperature: 0°C to 85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT42L128M64D2MC-18 WT:A memory module has a total of 240 pins. The pin configuration is as follows:

• Pins 1-8: VDD (Power supply)
• Pins 9-16: DQ0-DQ7 (Data input/output)
• Pins 17-24: DQ8-DQ15 (Data input/output)
• Pins 25-32: DQ16-DQ23 (Data input/output)
• Pins 33-40: DQ24-DQ31 (Data input/output)
• Pins 41-48: DQS0 (Data strobe)
• Pins 49-56: DQS0# (Data strobe inverted)
• Pins 57-64: VSS (Ground)
• Pins 65-72: VSS (Ground)
• Pins 73-80: DM0 (Data mask)
• Pins 81-88: DM0# (Data mask inverted)
• Pins 89-96: VDD (Power supply)
• Pins 97-104: VDD (Power supply)
• Pins 105-112: DQ32-DQ39 (Data input/output)
• Pins 113-120: DQ40-DQ47 (Data input/output)
• Pins 121-128: DQ48-DQ55 (Data input/output)
• Pins 129-136: DQ56-DQ63 (Data input/output)
• Pins 137-144: VSS (Ground)
• Pins 145-152: VSS (Ground)
• Pins 153-160: DQS1 (Data strobe)
• Pins 161-168: DQS1# (Data strobe inverted)
• Pins 169-176: VDD (Power supply)
• Pins 177-184: VDD (Power supply)
• Pins 185-192: DM1 (Data mask)
• Pins 193-200: DM1# (Data mask inverted)
• Pins 201-208: VSS (Ground)
• Pins 209-216: VSS (Ground)
• Pins 217-224: VREFCA (Reference voltage)
• Pins 225-232: VDD (Power supply)
• Pins 233-240: VSS (Ground)

Functional Features

• High-speed data transfer rate for efficient data processing
• Large storage capacity for storing a significant amount of data
• Low operating voltage for reduced power consumption
• DDR3 SDRAM interface for compatibility with various systems
• RoHS compliant, ensuring environmental friendliness

Advantages and Disadvantages

Advantages: - Fast data transfer rate improves system performance - High capacity allows for extensive data storage - Low power consumption reduces energy usage - Compatible with a wide range of systems

Disadvantages: - Relatively higher cost compared to lower capacity memory modules - Limited compatibility with older systems that do not support DDR3 SDRAM

Working Principles

The MT42L128M64D2MC-18 WT:A memory module is based on Dynamic Random Access Memory (DRAM) technology. It stores data in a matrix of capacitors, where each capacitor represents a single bit of information. The data is stored as electrical charges in the capacitors, and it needs to be refreshed periodically to maintain its integrity. When the system requires access to specific data, the memory controller sends appropriate signals to retrieve the desired information from the memory module.

Detailed Application Field Plans

The MT42L128M64D2MC-18 WT:A memory module is commonly used in various computing applications that require high-speed data storage and retrieval. Some of the typical application fields include:

1. Desktop computers
2. Laptops and notebooks
3. Workstations
4. Servers
5. Gaming consoles
6. Networking equipment

Detailed and Complete Alternative Models

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