MT29F4G08ABADAWP-ITX:D

Product Overview

Category

MT29F4G08ABADAWP-ITX:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F4G08ABADAWP-ITX:D offers a storage capacity of 4 gigabits (Gb).
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over an extended period.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F4G08ABADAWP-ITX:D comes in a compact form factor, allowing for easy integration into various electronic devices.

Package and Quantity

The product is packaged in a small outline integrated circuit (SOIC) package. It is typically available in reels containing a specific quantity, usually ranging from a few hundred to several thousand units per reel.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F4G08ABADAWP-ITX:D
• Memory Type: NAND Flash
• Storage Capacity: 4 Gb
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOIC
• Pin Count: 48

Detailed Pin Configuration

The pin configuration of MT29F4G08ABADAWP-ITX:D is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. ALE
28. CLE
29. RE#
30. WE#
31. WP#
32. R/B#
33. DQ0
34. DQ1
35. DQ2
36. DQ3
37. DQ4
38. DQ5
39. DQ6
40. DQ7
41. VSS
42. VSS
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Program Operation: MT29F4G08ABADAWP-ITX:D supports page program operations, allowing data to be written in page-sized increments.
• Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Read Operation: The product allows for fast and reliable reading of stored data.
• Wear-Leveling: This feature ensures even distribution of write and erase cycles across memory cells, enhancing the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited endurance: NAND flash memory has a finite number of write and erase cycles, which can affect its lifespan.
• Susceptible to data corruption: In rare cases, NAND flash memory may experience data corruption due to various factors such as power surges or physical damage.

Working Principles

MT29F4G08ABADAWP-ITX:D utilizes the principles of NAND flash memory technology. It consists of numerous memory cells organized in a grid-like structure. Each cell stores multiple bits of information by trapping electrons within a floating gate. The presence or absence of these trapped electrons determines the stored data value.

During write operations, the control logic applies appropriate voltages to the memory cells, allowing electrons to be injected or removed from the floating gates. Erase operations involve clearing the charge from entire blocks of memory cells. Reading data involves sensing the electrical state of each memory cell to determine the stored information.

Detailed Application Field Plans

MT29F4G08ABADAWP-ITX:D finds extensive application in various electronic devices that require non-volatile storage for data retention. Some common application fields include:

1. Smartphones and tablets
2. Digital cameras and camc