MT29F4G01AAADDHC:D

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • High speed
• Package: Integrated circuit (IC)
• Essence: Flash memory
• Packaging/Quantity: Depends on manufacturer's specifications

Specifications

• Capacity: 4 gigabytes (GB)
• Interface: Parallel
• Voltage: 3.3 volts (V)
• Access Time: <100 nanoseconds (ns)
• Erase/Program Cycles: >10,000 cycles
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT29F4G01AAADDHC:D has a specific pin configuration that allows for proper connection and communication with other devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data inputs/outputs
5. WE#: Write enable control
6. CE#: Chip enable control
7. RE#: Read enable control
8. RY/BY#: Ready/busy status output
9. WP#: Write protect control
10. RP#/VP#: Reset/power-down control
11. CLE: Command latch enable
12. ALE: Address latch enable
13. BYTE#: Byte enable control
14. NC: No connection (reserved)

Functional Features

• High-speed data transfer
• Reliable data retention
• Low power consumption
• Error correction capabilities
• Block erase and program operations
• Wear-leveling algorithms for extended lifespan

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Non-volatile memory - Low power consumption - High reliability

Disadvantages: - Limited erase/write cycles - Higher cost compared to other memory technologies - Susceptible to physical damage (e.g., electrostatic discharge)

Working Principles

The MT29F4G01AAADDHC:D utilizes flash memory technology, which is based on the principle of storing data in floating gate transistors. These transistors can retain their charge even when power is removed, allowing for non-volatile storage. The memory cells are organized into blocks, and data can be written or erased at the block level. To read data, the appropriate address is provided, and the stored charge in the selected memory cell is detected.

Detailed Application Field Plans

The MT29F4G01AAADDHC:D is commonly used in various electronic devices that require high-capacity and reliable data storage. Some application fields where this memory device finds use include: - Solid-state drives (SSDs) - Digital cameras - Mobile phones - Tablets - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABAEAWP:A - 8GB capacity, parallel interface, extended temperature range
2. MT29F4G16ABADAWP:C - 16GB capacity, parallel interface, industrial temperature range
3. MT29F4G32ABAEAWP:B - 32GB capacity, parallel interface, automotive-grade

These alternative models offer different capacities and temperature ranges to cater to specific application requirements.

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