SST26VF016B-104V/SM

Product Overview

Category

The SST26VF016B-104V/SM belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The SST26VF016B-104V/SM retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 16 megabits (2 megabytes).
• Fast operation: The device supports high-speed read and write operations.
• Low power consumption: It is designed to minimize power usage, making it suitable for battery-powered devices.
• Wide operating voltage range: The SST26VF016B-104V/SM can operate within a voltage range of 2.7V to 3.6V.

Package

The SST26VF016B-104V/SM is available in a small surface mount package (SM) for easy integration into circuit boards.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The SST26VF016B-104V/SM is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Capacity: 16 Megabits (2 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Write Endurance: 100,000 cycles

Detailed Pin Configuration

The SST26VF016B-104V/SM has a total of 8 pins, each serving a specific function:

1. Chip Select (CS): Used to enable or disable the device.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Receives data from the microcontroller.
4. Serial Data Output (SO): Transmits data to the microcontroller.
5. Write Protect (WP): Allows write protection of the memory.
6. Hold (HOLD): Pauses ongoing operations.
7. VCC: Power supply voltage.
8. Ground (GND): Common ground reference.

Functional Features

• High-speed read and write operations.
• Sector erase and block erase functions.
• Software and hardware write protection options.
• Flexible power management options.
• Efficient programming algorithms for fast data storage.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life.
• Wide operating voltage range allows compatibility with different systems.
• Fast read and write operations enhance overall system performance.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit compared to some alternatives.
• Susceptible to physical damage if mishandled.

Working Principles

The SST26VF016B-104V/SM utilizes flash memory technology to store data. It employs a Serial Peripheral Interface (SPI) for communication with the microcontroller. The device uses floating gate transistors to trap charges, representing binary data as electrical states. These trapped charges can be erased and reprogrammed using specific voltage levels and programming algorithms.

Detailed Application Field Plans

The SST26VF016B-104V/SM finds application in various fields, including: - Microcontrollers and embedded systems - Consumer electronics (e.g., smartphones, tablets) - Automotive electronics - Industrial automation systems - Medical devices

Detailed and Complete Alternative Models

1. SST25VF032B-80-4I-S2AF: 32 Megabit SPI Flash Memory
2. W25Q128JVSIQ: 128 Megabit Serial Flash Memory
3. MX25L25635FMI-10G: 256 Megabit Serial NOR Flash Memory
4. AT45DB321E-SHN2B-T: 32 Megabit DataFlash Memory

These alternative models offer similar functionality and can be considered as substitutes for the SST26VF016B-104V/SM.

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