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IXTH3N120
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IXTH3N120

Product Overview

Category: Power MOSFET
Use: Switching applications
Characteristics: High voltage, high speed, low on-resistance
Package: TO-247
Essence: Power management
Packaging/Quantity: Tube/25 units

Specifications

  • Voltage - Rated: 1200V
  • Current - Continuous Drain (Id) @ 25°C: 75A
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 37.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) @ Vgs: 100nC @ 10V

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source

Functional Features

  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified
  • Improved dv/dt capability

Advantages and Disadvantages

Advantages: - High voltage capability
- Low on-resistance
- Enhanced ruggedness
- Reliable performance

Disadvantages: - Higher cost compared to lower voltage MOSFETs
- Higher gate drive requirements

Working Principles

The IXTH3N120 is a power MOSFET designed for high voltage switching applications. It operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXTH3N120 is suitable for various high voltage applications such as: - Power supplies - Motor drives - Inverters - Welding equipment - Renewable energy systems

Detailed and Complete Alternative Models

  1. IXTH6N120
  2. IXFN55N120
  3. IRFP4668PBF
  4. STW45NM50FD

This concludes the English editing encyclopedia entry structure for IXTH3N120.

10个与IXTH3N120在技术解决方案中的应用相关的常见问题及解答

  1. What is IXTH3N120?

    • IXTH3N120 is a high voltage, fast switching IGBT (Insulated Gate Bipolar Transistor) designed for various technical solutions requiring efficient power control.

  2. What are the key features of IXTH3N120?

    • The key features of IXTH3N120 include a high voltage rating, fast switching speed, low saturation voltage, and ruggedness for reliable performance in demanding applications.

  3. In what technical solutions can IXTH3N120 be used?

    • IXTH3N120 can be used in a wide range of technical solutions such as motor drives, renewable energy systems, industrial automation, and power supplies.

  4. What is the maximum voltage and current rating of IXTH3N120?

    • IXTH3N120 has a maximum voltage rating of [insert voltage] and a maximum current rating of [insert current].

  5. How does IXTH3N120 compare to other IGBTs in terms of performance?

    • IXTH3N120 offers superior performance in terms of efficiency, switching speed, and ruggedness compared to many other IGBTs available in the market.

  6. What are the thermal characteristics of IXTH3N120?

    • IXTH3N120 has excellent thermal characteristics, allowing for efficient heat dissipation and ensuring reliable operation even in high-temperature environments.

  7. Can IXTH3N120 be used in parallel configurations for higher power applications?

    • Yes, IXTH3N120 can be used in parallel configurations to achieve higher power levels while maintaining system reliability.

  8. Are there any application notes or reference designs available for using IXTH3N120?

    • Yes, there are application notes and reference designs available from the manufacturer to assist in the proper implementation of IXTH3N120 in various technical solutions.

  9. What protection features does IXTH3N120 offer for overcurrent and overvoltage conditions?

    • IXTH3N120 incorporates built-in protection features for overcurrent and overvoltage conditions, enhancing system safety and reliability.

  10. Where can I find detailed technical specifications and datasheets for IXTH3N120?

    • Detailed technical specifications and datasheets for IXTH3N120 can be found on the manufacturer's website or by contacting their technical support team.