IXFR90N30
Product Overview
- Category: Power MOSFET
- Use: Switching applications in power supplies, motor control, and other high current applications
- Characteristics: High voltage, low on-resistance, fast switching speed
- Package: TO-220AB
- Essence: Efficient power switching
- Packaging/Quantity: Bulk packaging, 50 pieces per pack
Specifications
- Voltage Rating: 900V
- Current Rating: 90A
- On-Resistance: 0.09 ohms
- Gate Threshold Voltage: 4V
- Maximum Power Dissipation: 300W
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
- Gate (G)
- Drain (D)
- Source (S)
Functional Features
- Low on-resistance for minimal power loss
- Fast switching speed for efficient operation
- High voltage rating for versatile applications
- Robust construction for reliability in demanding environments
Advantages and Disadvantages
Advantages
- High voltage rating allows for use in various applications
- Low on-resistance ensures minimal power dissipation
- Fast switching speed enhances efficiency
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Larger physical size due to higher voltage and current ratings
Working Principles
The IXFR90N30 operates based on the principle of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through, and when the voltage is removed, the current flow ceases.
Detailed Application Field Plans
The IXFR90N30 is suitable for a wide range of applications including: - Power supplies - Motor control systems - High current switching circuits - Inverters and converters - Industrial automation equipment
Detailed and Complete Alternative Models
- IXFR80N50
- IXFR100N25
- IXFR85N40
- IXFR95N35
In conclusion, the IXFR90N30 Power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power switching applications. Its robust construction and versatile characteristics make it a reliable component for demanding environments.
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10个与IXFR90N30在技术解决方案中的应用相关的常见问题及解答
What is IXFR90N30?
- IXFR90N30 is a high-power MOSFET transistor designed for use in power supply and motor control applications.
What are the key specifications of IXFR90N30?
- The key specifications of IXFR90N30 include a drain-source voltage of 900V, a continuous drain current of 90A, and a low on-resistance.
In what technical solutions can IXFR90N30 be used?
- IXFR90N30 can be used in various technical solutions such as high-power switching applications, motor drives, and power supplies.
How does IXFR90N30 contribute to efficient power management?
- IXFR90N30's low on-resistance and high current capability contribute to efficient power management by minimizing power losses and improving overall system efficiency.
What are the thermal considerations when using IXFR90N30 in a design?
- Proper thermal management is crucial when using IXFR90N30 to ensure that it operates within its specified temperature limits and maintains reliability.
Can IXFR90N30 be used in automotive applications?
- Yes, IXFR90N30 is suitable for automotive applications where high-voltage and high-current handling capabilities are required.
Are there any application notes or reference designs available for IXFR90N30?
- Yes, application notes and reference designs are available to assist engineers in implementing IXFR90N30 in their designs effectively.
What are the typical circuit configurations for utilizing IXFR90N30 in power supply designs?
- Common circuit configurations for power supply designs using IXFR90N30 include half-bridge and full-bridge topologies, depending on the specific requirements of the application.
Does IXFR90N30 require any special gate driving considerations?
- Yes, IXFR90N30 may require specific gate driving considerations to ensure fast switching and optimal performance.
What are the recommended PCB layout guidelines for incorporating IXFR90N30 into a design?
- Following recommended PCB layout guidelines, such as minimizing parasitic inductance and optimizing thermal dissipation, is essential for successful integration of IXFR90N30 in a design.