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IXFN180N07
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IXFN180N07

Product Overview

Category

The IXFN180N07 belongs to the category of power MOSFETs.

Use

It is commonly used in high-power applications such as motor control, power supplies, and inverters.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power requirements

Package

The IXFN180N07 is typically available in a TO-268 package.

Essence

The essence of the IXFN180N07 lies in its ability to efficiently handle high power levels while maintaining low losses.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 75V
  • Current Rating: 180A
  • On-State Resistance: 1.7 mΩ
  • Gate Threshold Voltage: 2.5V
  • Maximum Power Dissipation: 625W

Detailed Pin Configuration

The IXFN180N07 typically has three pins: 1. Source (S) 2. Drain (D) 3. Gate (G)

Functional Features

  • Low conduction losses
  • Fast switching times
  • High current-carrying capability
  • Robust thermal performance

Advantages

  • High power handling capacity
  • Efficient switching characteristics
  • Low on-state resistance
  • Suitable for high-frequency applications

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Requires careful thermal management due to high power dissipation

Working Principles

The IXFN180N07 operates based on the principle of field-effect, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. When the gate-source voltage exceeds the threshold, the MOSFET enters the conducting state, allowing current to flow through.

Detailed Application Field Plans

The IXFN180N07 finds extensive use in various high-power applications, including: - Motor drives for electric vehicles - Industrial power supplies - Renewable energy systems - Uninterruptible power supplies (UPS) - Welding equipment

Detailed and Complete Alternative Models

Some alternative models to the IXFN180N07 include: - IRFP4668PbF - FDPF33N25T - AUIRF7739L2

In conclusion, the IXFN180N07 power MOSFET offers high-performance characteristics suitable for demanding high-power applications, making it a preferred choice for industries requiring efficient power management solutions.

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10个与IXFN180N07在技术解决方案中的应用相关的常见问题及解答

  1. What is the maximum drain-source voltage of IXFN180N07?

    • The maximum drain-source voltage of IXFN180N07 is 75V.

  2. What is the continuous drain current rating of IXFN180N07?

    • The continuous drain current rating of IXFN180N07 is 180A.

  3. What is the on-state resistance (RDS(on)) of IXFN180N07?

    • The on-state resistance (RDS(on)) of IXFN180N07 is typically 1.7mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IXFN180N07?

    • The gate threshold voltage of IXFN180N07 is typically 2.5V.

  5. What is the maximum junction temperature of IXFN180N07?

    • The maximum junction temperature of IXFN180N07 is 175°C.

  6. What are the typical applications for IXFN180N07?

    • IXFN180N07 is commonly used in high-current, high-frequency power converters, motor drives, and other high-power applications.

  7. Does IXFN180N07 require a heat sink for operation?

    • Yes, IXFN180N07 typically requires a heat sink to dissipate heat effectively, especially when operating at high currents.

  8. What is the input capacitance of IXFN180N07?

    • The input capacitance of IXFN180N07 is typically 8500pF.

  9. Is IXFN180N07 suitable for automotive applications?

    • Yes, IXFN180N07 is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.

  10. What are the recommended gate driver specifications for IXFN180N07?

    • It is recommended to use a gate driver capable of providing sufficient current and voltage to drive the gate of IXFN180N07 effectively, such as a driver with peak output currents of several amps and suitable voltage levels.