IX2B11S7T/R

Product Overview

• Category: Electronic Component
• Use: Signal Amplification and Switching
• Characteristics: High Gain, Low Noise, Small Size
• Package: SOT-23
• Essence: Transistor
• Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current: 200mA
• Maximum Collector-Emitter Voltage: 40V
• Maximum Power Dissipation: 350mW
• Transition Frequency: 250MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The IX2B11S7T/R transistor has three pins:

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High gain amplification of weak signals
• Fast switching capability
• Low noise performance
• Suitable for low-power applications
• Compact size for space-constrained designs

Advantages

• Provides signal amplification and switching in a single component
• High gain allows for amplification of weak signals without distortion
• Low noise performance ensures accurate signal reproduction
• Small size enables integration into compact electronic devices
• Wide operating temperature range allows for versatile usage

Disadvantages

• Limited maximum collector current may restrict use in high-power applications
• Lower transition frequency compared to some alternative models may limit bandwidth in certain applications

Working Principles

The IX2B11S7T/R is an NPN bipolar junction transistor that operates based on the principles of amplification and switching. When a small current flows into the base pin (B), it controls a larger current flow between the collector (C) and emitter (E) pins. This allows the transistor to amplify weak signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The IX2B11S7T/R transistor finds applications in various fields, including:

1. Audio Amplification: Used in audio amplifiers to boost weak audio signals.
2. Sensor Interface: Enables signal conditioning and amplification in sensor interface circuits.
3. Communication Systems: Utilized in RF amplifiers and low-power transmitters for signal amplification and switching.
4. Consumer Electronics: Integrated into portable devices, such as smartphones and tablets, for audio amplification and signal switching.

Detailed and Complete Alternative Models

1. IX2B12S7T/R: Similar specifications with higher transition frequency (300MHz).
2. IX2B10S7T/R: Similar specifications with lower maximum collector current (150mA).
3. IX2B11P7T/R: PNP counterpart of IX2B11S7T/R with similar specifications.

Note: The above alternative models are provided for reference and may have slight variations in characteristics and package type.

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