IS61WV102416BLL-10MI

Product Overview

Category

IS61WV102416BLL-10MI belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Non-volatile memory
• Low power consumption
• Large storage capacity
• Compact size

Package

IS61WV102416BLL-10MI is available in a small outline package (SOP) format.

Essence

The essence of IS61WV102416BLL-10MI lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61WV102416BLL-10MI is typically packaged in reels or trays and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years

Detailed Pin Configuration

IS61WV102416BLL-10MI has the following pin configuration:

1. Vcc (Power Supply)
2. WE (Write Enable)
3. OE (Output Enable)
4. A0-A19 (Address Inputs)
5. DQ0-DQ15 (Data Inputs/Outputs)
6. CE (Chip Enable)
7. UB/LB (Upper Byte/Lower Byte)
8. NC (No Connection)
9. GND (Ground)

Functional Features

• Fast random access time for quick data retrieval.
• Low power consumption for energy-efficient operation.
• Non-volatile memory ensures data retention even when power is lost.
• Easy integration into various electronic devices due to its compact size and standard interface.

Advantages

• High-speed operation allows for efficient data processing.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile memory ensures data integrity during power interruptions.
• Large storage capacity accommodates a wide range of applications.
• Compact size enables space-saving designs.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability in terms of storage capacity compared to other memory types.
• Susceptible to electromagnetic interference (EMI) due to its semiconductor nature.

Working Principles

IS61WV102416BLL-10MI utilizes static random access memory technology, which stores each bit of data in a flip-flop circuit. This allows for fast and direct access to the stored information without the need for refreshing. The memory cells are organized in a matrix, with each cell being addressed by a unique combination of address inputs. When a read or write operation is initiated, the appropriate row and column addresses are selected, enabling the transfer of data between the memory array and the external device.

Detailed Application Field Plans

IS61WV102416BLL-10MI finds application in various fields, including:

1. Computers and servers
2. Networking equipment
3. Telecommunications devices
4. Automotive electronics
5. Industrial control systems
6. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV102416BLL-10MI include:

1. MT48LC16M16A2P-75IT: 16Mb x 16-bit SDRAM
2. CY7C1041DV33-10ZSXI: 4Mb x 16-bit SRAM
3. AS6C4008-55BIN: 4Mb x 8-bit SRAM
4. K6R4016V1D-TC10: 4Mb x 16-bit SRAM

These alternative models provide comparable features and can be considered as substitutes based on specific application requirements.

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